Technology Details

Area of Technology:Chemical and Allied

Title of the Innovation: Silicon Carbide Single Crystal Bulk Growth and Wafer Fabrication Process Technology for 4 Diameter Substrates

Brief About Innovation

RF technology is the backbone of telecommunications and radar for navigation and safety systems across commercial and military aviation, air traffic control, aircraft to satellite communications, space exploration and more. Wide bandgap semiconductors such as SiC, GaN and AlN show superior material properties, allowing operation at high switching speed, high voltage, high current density and high temperature. Among these, SiC present a better trade-off between the characteristics and commercial availability of the wafers and the maturity of their technological processes. SiC substrate possesses higher thermal conductivity, and better lattice match between SiC and GaN.

These wafers can be produced with n-type and semi-insulating characteristics as per the requirements. N-type SiC wafer is an ideal substrate material for making high power, high temperature and anti-radiation devices which has got significant applications in electric vehicles, photovoltaic power generation, power transmission etc.

The proposed single crystal bulk growth and wafer fabrication process technology to produce 4” diameter silicon carbide substrates technology includes semi-insulating as well as N-type SiC substrates.

Note*: This technology will be licensed through the bidding process only & the last date of bid submission is 11-05-2023.

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