Technology Details

Area of Technology:Electrical & Electronics

Title of the Innovation: GaN HEMT Based MMIC Technology

Brief About Innovation

GaN HEMT Based MMIC Technology

GaN HEMT-Based MMIC Technology, a cutting-edge solution for high-frequency, high-power RF applications. The GaN HEMT technology developed by SSPL includes various technology nodes targeting specific applications.This technology enables superior communication systems and radar performance, catering to defense, aerospace, and telecommunication needs. The complete technology includes, the device process technology for L/S- Band Power HEMT bars and PA, LNA and Switch MMICs upto X band.

✅ High Electron Mobility Transistors (HEMTs): Enables high-power and efficient RF signal transmission.

✅ Wide Frequency Coverage: Supports L/S-band power HEMT bars and MMICs up to X-band.

✅ Enhanced Reliability: Designed for rugged environments with improved thermal management.

✅ Scalability: Developed with multiple technology nodes, targeting application-specific requirements.

✅ Compact MMIC Design: Integrates power amplifiers (PA), low-noise amplifiers (LNA), and RF switches.

Applications

🚀 Defense & Aerospace: Supports next-gen radar and electronic warfare systems. 📡 Telecommunications: Powers satellite and terrestrial communication networks. 🔬 Scientific Research: Used in RF instrumentation and advanced wireless technologies.

Note*: This technology is available for licensing via the bidding process; Interested industries are encouraged to reach out for further details and ToT opportunities.